dmn2028uss document number: ds32075 rev. 4 - 2 1 of 7 www.diodes.com october 2013 ? diodes incorporated dmn2028uss advance information 20v n-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c (note 6) 20v 20m ? @ v gs = 4.5v 9.8a 28m ? @ v gs = 2.5v 8.3a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. ? battery charging ? power management functions ? dc-dc converters ? portable power adaptors features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low output leakage ? esd protected up to 2kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 (note 1) ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram below ? terminals: finish ? matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.074 grams (approximate) ordering information (note 4) product marking reel size (inches) tape width (mm) quantity per reel dmn2028uss-13 n2028us 13 12 2,500 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information top view top view so-8 d s s s g d d d equivalent circuit esd protected to 2kv chengdu a/t site shanghai a/t site = manufacturer?s marking n2028us = product type marking code yyww = date code marking yy or yy = year (ex: 13 = 2013) ww = week (01 - 53) yy = date code marking for sat (shanghai assembly/ test site) yy = date code marking for cat (chengdu assembly/ test site) 1 4 8 5 n2028us ww yy 1 4 8 5 n2028us ww yy d s g gate protection diode
dmn2028uss document number: ds32075 rev. 4 - 2 2 of 7 www.diodes.com october 2013 ? diodes incorporated dmn2028uss advance information maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss 20 v gate-source voltage v gs ? 12 continuous drain current v gs = 4.5v (note 6) i d 9.8 a t a = +70c (note 6) 7.9 (note 5) 7.3 pulsed drain current v gs = 4.5v (note 7) i dm 45.0 continuous source current (body diode) (note 6) i s 6.0 pulsed source current (body diode) (note 7) i sm 45.0 thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation linear derating factor (note 5) p d 1.56 12.5 w mw/c (note 6) 2.81 22.5 thermal resistance, junction to ambient (note 5) r ? ja 80.0 c/w (note 6) 44.5 thermal resistance, junction to lead (note 8) r ? ? 10 sec. 7. same as note (5), except the device is pulsed with d = 0.02 and pulse width 300s. 8. thermal resistance from junction to solder-point (at the end of the drain lead).
dmn2028uss document number: ds32075 rev. 4 - 2 3 of 7 www.diodes.com october 2013 ? diodes incorporated dmn2028uss advance information thermal characteristics 100m 1 10 1m 10m 100m 1 10 25mm x 25mm 1oz fr4 single pulse t amb =25c r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area i d drain current (a) v ds drain-source voltage (v) 0 20406080100120140160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25mm x 25mm 1oz fr4 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w)
dmn2028uss document number: ds32075 rev. 4 - 2 4 of 7 www.diodes.com october 2013 ? diodes incorporated dmn2028uss advance information electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss 20 - - v v gs = 0v, i d = 250 a zero gate voltage drain current i dss - - 1.0 a v ds = 20v, v gs = 0v gate-source leakage i gss - - 10 a v gs = 12v, v ds = 0v on characteristics gate threshold voltage v gs ( th ) 0.6 1.0 1.3 v v ds = v gs , i d = 250 a static drain-source on-resistance (note 9) r ds (on) - 11 20 m ? v gs = 4.5v, i d = 9.4a 15 28 v gs = 2.5v, i d = 8.3a forward transfer admittance (note 9 & 10) |y fs | - 16 - s v ds = 5v, i d = 9.4a diode forward voltage (note 9) v sd - 0.7 1.3 v v gs = 0v, i s = 1.3a dynamic characteristics (note 10) input capacitance c iss - 1000 - pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss - 166 - reverse transfer capacitance c rss - 158 - gate resistance r g - 1.51 - ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (note 11) q g - 7.0 - nc v gs = 2.5v v ds = 10v i d = 9.4a total gate charge (note 11) q g - 11.6 - v gs = 4.5v gate-source charge (note 11) q g s - 2.7 - gate-drain charge (note 11) q g d - 3.4 - turn-on delay time (note 11) t d ( on ) - 11.67 - ns v gs = 4.5v, v ds = 10v, r g = 6 ? , i d = 1a turn-on rise time (note 11) t r - 12.49 - turn-off delay time (note 11) t d ( off ) - 35.89 - turn-off fall time (note 11) t f - 12.33 - notes: 9. measured under pulsed conditions. pulse width ? 300 s; duty cycle ? 2% 10. for design aid only, not subject to production testing. 11. switching characteristics are inde pendent of operating junction temperatures. 0 5 10 15 20 25 30 00.511.52 fig. 1 typical output characteristic v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d v = 2.0v gs v = 1.8v gs v = 2.5v gs v = 3.0v gs v = 4.5v gs v = 3.5v gs v = 4.0v gs v = 10v gs 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs 0 5 10 15 20 i, d r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a
dmn2028uss document number: ds32075 rev. 4 - 2 5 of 7 www.diodes.com october 2013 ? diodes incorporated dmn2028uss advance information 0 0.005 0.010 0.015 0.020 0.025 0.030 0 5 10 15 20 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) ? v = 4.5v gs v = 2.5v gs 0 0.005 0.010 0.015 0.020 0.025 0.030 0 5 10 15 20 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.6 0.8 1.0 1.2 1.4 1.6 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = 2.5v i = 5a gs d v = 4.5v i = 10a gs d 0 0.005 0.010 0.015 0.020 0.025 0.030 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = 4.5v i = 10a gs d v = 2.5v i = 5a gs d 0 0.5 1.0 1.5 2.0 2.5 3.0 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd i, s o u r c e c u r r e n t (a) s t = 25c a
dmn2028uss document number: ds32075 rev. 4 - 2 6 of 7 www.diodes.com october 2013 ? diodes incorporated dmn2028uss advance information package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. 10 100 1,000 10,000 f = 1mhz 0 5 10 15 20 fig. 9 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) c iss c rss c oss 0 5 10 15 20 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 i , leaka g e c u r r e n t (na) dss 10,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 2 4 6 8 10 0 5 10 15 20 25 30 fig. 11 gate-charge characteristics q , total gate charge (nc) g v , gate-source voltage (v) gs v = 15v i = 9.4a ds d so-8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 ?? 0 ? 8 ? all dimensions in mm gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254
dmn2028uss document number: ds32075 rev. 4 - 2 7 of 7 www.diodes.com october 2013 ? diodes incorporated dmn2028uss advance information suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 x c1 c2 y
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